Modeling of nanoscale gate-all-around MOSFETs

被引：131
|
作者：
Jiménez, D
Sáenz, JJ
Iñíguez, B
Suñé, J
Marsal, LF
Pallarès, J
机构：
[1] Univ Autonoma Barcelona, Escola Tecn Super Engn, Dept Elect Engn, Barcelona, Spain
[2] Univ Autonoma Barcelona, Dept Fis Mat Condensada, Fac Ciencias, Barcelona, Spain
[3] Univ Rovira & Virgili, Escola Tecn Super Engn, Dept Engn Elect, Barcelona, Spain
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 05期
关键词：
modeling; MOSFETs; quantum wires;
D O I：
10.1109/LED.2004.826526
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a compact physics-based model for the nanoscale gate-all-around MOSFET working in the ballistic limit. The current through the device is obtained by means of the Lan-dauer approach, being the barrier height the key parameter in the model. The exact solution of the Poisson's equation is obtained in order to deal with all the operation regions tracing properly the transitions between them.
引用
收藏
页码：314 / 316
页数：3
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