Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs

被引：0

作者：

Peng, Baokang ^{[1
]}

Jiao, Yanxin ^{[1
]}

Zhong, Haotian ^{[1
]}

Rong, Zhao ^{[1
]}

Wang, Zirui ^{[2
]}

Xiao, Ying ^{[3
]}

Wong, Waisum ^{[1
]}

Zhang, Lining ^{[1
]}

Wang, Runsheng ^{[2
]}

Huang, Ru ^{[2
]}

机构：

[1] Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China

[2] Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China

[3] Hisilicon Corp, Shanghai 201700, Peoples R China

来源：

FUNDAMENTAL RESEARCH | 2024年 / 4卷 / 05期

关键词：

Gate-all-around FET; Compact model; Quantum mechanical confinement; Nanosheet FET; Nanowire FET; Sub-band energy; NANOWIRE; SI;

D O I：

10.1016/j.fmre.2022.09.035

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

In this work, a surface-potential based compact model focusing on the quantum confinement effects of ultimately scaled gate-all-around (GAA) MOSFET is presented. Energy quantization with sub-band formation along the radius direction of cylindrical GAAs or thickness direction of nanosheet GAAs leads to significant quantization effects. An analytical model of surface potentials is developed by solving the Poisson equation with incorporating sub- band effects. In combination with the existing transport model framework, charge-voltage and current-voltage formulations are developed based on the surface potential. The model formulations are then extensively validated using TCAD numerical simulations as well as Si data of nanosheet GAA MOSFETs. Simulations of typical circuits verify the model robustness and convergence for its applications in GAA technology.

引用

页码：1306 / 1313

页数：8

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