Current-voltage characteristics of silicon on insulator metal oxide semiconductor field effect transistors in ballistic mode

被引：0

作者：

Natori, Kenji ^{[1
]}

机构：

[1] Univ of Tsukuba, Ibaraki, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 1 B期

关键词：

Ballistic transport - Current voltage characteristics - Quantum transport;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：554 / 557

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