Current-voltage characteristics of Schottky-gate field-effect transistors

被引：0
|
作者：
Baldin, V.A.
Lazunin, Yu.A.
机构：
来源：
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | 1991年 / 46卷 / 09期
关键词：
5;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：71 / 73
相关论文
共 50 条
  • [1] THE CURRENT-VOLTAGE CHARACTERISTICS OF SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
    BALDIN, VA
    LAZUNIN, YA
    TELECOMMUNICATIONS AND RADIO ENGINEERING, 1991, 46 (09) : 71 - 73
  • [2] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
    BARRERA, JS
    ARCHER, RJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1023 - 1030
  • [3] STATIC CHARACTERISTICS OF GALLIUM-ARSENIDE SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
    STAROSELSKII, VI
    SOVIET MICROELECTRONICS, 1982, 11 (03): : 122 - 125
  • [4] Influence of Gate Dielectrics of Field-Effect Graphene Transistors on Current-Voltage Characteristics
    Abramov I.I.
    Kolomeitseva N.V.
    Labunov V.A.
    Romanova I.A.
    Shcherbakova I.Y.
    Russian Microelectronics, 2021, 50 (02) : 118 - 125
  • [5] Influence of radiation on the current-voltage characteristics of AsGa Schottky gate field effect transistors
    Konakova, R.V.
    Milenin, V.V.
    Solov'ev, E.A.
    Statov, V.A.
    Stovpovoj, M.A.
    Rengevich, A.E.
    Tarielashvili, G.T.
    Izvestiya VUZ: Radioelektronika, 1999, 42 (04): : 73 - 76
  • [6] SCALING OF SUBMICRON GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
    VALIEV, KA
    RYZHII, VI
    KHRENOV, GY
    SOVIET MICROELECTRONICS, 1989, 18 (02): : 49 - 54
  • [7] CURRENT-VOLTAGE CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS WITH SHORT CHANNELS
    HESS, K
    DORDA, G
    SAH, CT
    SOLID STATE COMMUNICATIONS, 1976, 19 (05) : 471 - 473
  • [8] DESIGN AND PERFORMANCE OF MICROWAVE AMPLIFIERS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
    LIECHTI, CA
    TILLMAN, RL
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (05) : 510 - 517
  • [9] CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS.
    Baek, Junho
    Shur, Michael
    Daniels, Robert R.
    Arch, David K.
    Abrokwah, Jonathon K.
    Tufte, Obert N.
    IEEE Transactions on Electron Devices, 1987, ED-34 (08) : 1650 - 1657
  • [10] ANALYTICAL DERIVATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SCHOTTKY FIELD-EFFECT TRANSISTORS, INCLUDING SOURCE AND DRAIN RESISTANCE EFFECT
    SPIRIDONOV, NS
    MOROZOV, SG
    VLASOV, AN
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1986, 29 (12): : 70 - 71
12345