Current-voltage characteristics of silicon on insulator metal oxide semiconductor field effect transistors in ballistic mode

被引：0
|
作者：
Natori, Kenji [1 ]
机构：
[1] Univ of Tsukuba, Ibaraki, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 1 B期
关键词：
Ballistic transport - Current voltage characteristics - Quantum transport;
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摘要：
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页码：554 / 557
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