Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

被引：1

作者：

Amakawa, Shuhei ^{[1
]}

Toda, Asato ^{[1
]}

Ohyama, Katsuroh ^{[1
]}

Higashiguchi, Naoya ^{[1
]}

Hori, Daisuke ^{[1
]}

Shintaku, Yasuhiro ^{[1
]}

Miyake, Masataka ^{[2
]}

Miura-Mattausch, Mitiko ^{[1
,2
]}

机构：

[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Hiroshima 7398530, Japan

[2] Hiroshima Univ, HiSIM Res Ctr, Hiroshima 7398530, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 04期

关键词：

SOI-MOSFETS; COMPACT MODEL;

D O I：

10.1143/JJAP.50.04DC12

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents an experimentally found device-size-independent universal relationship between the settling time of floating-body silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) and the substrate current in body-tied devices. Such a relationship could enable one to characterize dynamic properties of SOI MOSFETs through DC measurements and would be useful for physical compact modeling of history effects. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

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