INVESTIGATION OF FLOATING BODY EFFECTS IN SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：17

作者：

OUISSE, T ^{[1
]}

GHIBAUDO, G ^{[1
]}

BRINI, J ^{[1
]}

CRISTOLOVEANU, S ^{[1
]}

BOREL, G ^{[1
]}

机构：

[1] INST NATL POLYTECH GRENOBLE,ECOLE NATL SUPER ELECTR & RADIOELECT GRENOBLE,F-38016 GRENOBLE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 07期

关键词：

D O I：

10.1063/1.349200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An analytical model and experimental results are proposed to account for the floating body effects in SOI (silicon-on-insulator) MOSFETs (metal-oxide-semiconductor field-effect transistors). The model enables a quantitative description of hysteresis effects in the static characteristics and shows a strong correlation between the conductance and transconductance. It is demonstrated that an SOI MOSFET may exhibit both a negative conductance and a negative transconductance. A short-channel device may be biased in such a way that a critical phenomenon, comparable to a second-order phase transition, takes place. The major parameters and applications of these critical effects are described in detail.

引用

页码：3912 / 3919

页数：8

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