Threshold Voltage Dependence of Threshold Voltage Variability in Intrinsic Channel Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with Ultrathin Buried Oxide

被引：11

作者：

Lee, Chiho ^{[1
]}

Putra, Arifin Tamsir ^{[1
]}

Shimizu, Ken ^{[1
]}

Hiramoto, Toshiro ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

DEPLETED SOI MOSFETS; DOPANT FLUCTUATIONS; IMPACT; NUMBER;

D O I：

10.1143/JJAP.49.04DC01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Threshold voltage (V-th) variability due to random dopant fluctuations in intrinsic channel silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) with an ultrathin buried oxide is investigated by three-dimensional device simulation. It is found that, in contrast to bulk and doped channel SOI MOSFETs, V-th variations in intrinsic channel SOI MOSFETs decrease with increasing V-th. A device design guideline for intrinsic channel SOI MOSFETs is also discussed. (C) 2010 The Japan Society of Applied Physics

引用

页数：4

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