Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal-Oxide-Semiconductor Field-Effect Transistors

被引：2

作者：

Wang, Sheng-Chun ^{[1
,2
]}

Su, Pin ^{[1
]}

Chen, Kun-Ming ^{[2
]}

Huang, Sheng-Yi ^{[3
]}

Hung, Cheng-Chou ^{[3
]}

Huang, Guo-Wei ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Nano Device Labs, Hsinchu 300, Taiwan

[3] United Microelect Corp, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期

关键词：

EXTRACTION;

D O I：

10.1143/JJAP.48.04C041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents small-signal and noise modeling for radio-frequency (RF) silicon-on-insulator (SOI) dynamic threshold voltage (DT) metal-oxide-semiconductor field-effect transistors (MOSFETs). The inherent body parasitics, such as source- and drain-side junction capacitances, and access body resistance have been incorporated in this model. In addition, the analytical equations useful for parameter extractions are derived. The modeling results show good agreements with the measured data both in RF small-signal and noise aspects up to 12 GHz. Besides, we have made comparisons of important model parameters for DT and standard MOSFETs. The extracted parameters show reasonable trend with respect to applying voltages and channel lengths, which reveals the accuracy of the extraction results using our proposed method. (C) 2009 The Japan Society of Applied Physics

引用

页数：4

共 50 条

[1] Radio-frequency small-signal and noise modeling for silicon-on-insulator dynamic threshold voltage metal-oxide-semiconductor field-effect transistors
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[J]. Japanese Journal of Applied Physics, 2009, 48 (4 PART 2):
[2] Threshold Voltage Dependence of Threshold Voltage Variability in Intrinsic Channel Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with Ultrathin Buried Oxide
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