Current-voltage and capacitance characteristics of modulation-doped field effect transistors

被引：0
|
作者：
Shenggui, Deng [1 ]
机构：
[1] Acad Sinica
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1990年 / 11卷 / 07期
关键词：
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页码：521 / 526
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