PROPERTIES OF EPITAXIAL SILICON LAYERS ON BURIED SILICON-NITRIDE PRODUCED BY ION-IMPLANTATION

被引：6
|
作者：
SKORUPA, W [1 ]
KREISSIG, U [1 ]
OERTEL, H [1 ]
BARTSCH, H [1 ]
机构：
[1] INST SOLID STATE PHYS & ELECTRON MICROSCOPY,DDR-4010 HALLE,GER DEM REP
来源：
VACUUM | 1986年 / 36卷 / 11-12期
关键词：
D O I：
10.1016/0042-207X(86)90144-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：933 / 937
页数：5
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