PROPERTIES OF BURIED SIC LAYERS PRODUCED BY CARBON ION-IMPLANTATION IN (100) BULK SILICON AND SILICON-ON-SAPPHIRE

被引：7
|
作者：
GOLECKI, I
KROKO, L
GLASS, HL
机构：
[1] ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,ANAHEIM,CA 92803
[2] CALTECH,DEPT APPL PHYS,PASADENA,CA 91125
[3] ROCKWELL INT CORP,CTR SCI,ANAHEIM,CA 92803
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 05期
关键词：
D O I：
10.1007/BF02657905
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：315 / 321
页数：7
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