INCREASED CARRIER LIFETIMES IN EPITAXIAL SILICON LAYERS ON BURIED SILICON-NITRIDE PRODUCED BY ION-IMPLANTATION

被引：10
|
作者：
SKORUPA, W [1 ]
KREISSIG, U [1 ]
HENSEL, E [1 ]
BARTSCH, H [1 ]
机构：
[1] INST SOLID STATE PHYS & ELECTRON MICROSCOPY,DDR-401 HALLE,GER DEM REP
来源：
ELECTRONICS LETTERS | 1984年 / 20卷 / 10期
关键词：
D O I：
10.1049/el:19840295
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：426 / 427
页数：2
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