EPITAXIAL SILICON LAYERS GROWN ON ION-IMPLANTED SILICON-NITRIDE LAYERS

被引：56
|
作者：
DEXTER, RJ
PICRAUX, ST
WATELSKI, SB
机构：
[1] TEXAS INSTR INC,DALLAS,TX 75222
[2] SANDIA LABS,ALBUQUERQUE,NM 87115
来源：
APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 08期
关键词：
D O I：
10.1063/1.1654956
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：455 / 457
页数：3
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