EXPLOSIVE CRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS

被引：8
|
作者：
ANDRA, G [1 ]
GEILER, HD [1 ]
GLASER, E [1 ]
GOTZ, G [1 ]
WAGNER, M [1 ]
HEINIG, KH [1 ]
机构：
[1] ZFK ROSSENDORF, DDR-8051 DRESDEN, GER DEM REP
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷
关键词：
D O I：
10.1016/S0168-583X(87)80114-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：571 / 576
页数：6
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