SYNTHESIS OF BURIED INSULATING LAYERS IN SILICON BY ION-IMPLANTATION

被引：1
|
作者：
IBRAHIM, AM [1 ]
BEREZIN, AA [1 ]
机构：
[1] MCMASTER UNIV, DEPT ENGN PHYS, HAMILTON L8S 4M1, ONTARIO, CANADA
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1992年 / 31卷 / 04期
关键词：
D O I：
10.1016/0254-0584(92)90190-J
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Synthesis of buried insulating layers by ion implantation of oxygen and nitrogen into silicon is reviewed. Relevant concepts of ion implantation are discussed. The effects of various implantation and annealing parameters on the structure and characteristics of insulating layers are analyzed in the light of recent experimental results.
引用
收藏
页码：285 / 300
页数：16
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