MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF BURIED SILICON-NITRIDE LAYERS IN SILICON FORMED BY ION-IMPLANTATION

被引：0
|
作者：
FUNG, CD [1 ]
LIAO, JL [1 ]
ELSAYED, KR [1 ]
KOPANSKI, JJ [1 ]
机构：
[1] CASE WESTERN RESERVE UNIV,DEPT ELECT ENGN & APPL PHYS,CLEVELAND,OH 44106
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C80 / C80
页数：1
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