ELECTRICAL-PROPERTIES OF SILICON-NITRIDE AND SILICON-OXIDE THIN-FILMS FORMED BY LOW-ENERGY ION-IMPLANTATION

被引：0
|
作者：
FURUMURA, Y [1 ]
NOUE, S [1 ]
MAEDA, M [1 ]
TAKAGI, M [1 ]
机构：
[1] FUJITSU LTD,DIV IC PROC ENGN,NAKAHARA KU,KAWASAKI 211,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 03期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C80 / C80
页数：1
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