MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF BURIED SILICON-NITRIDE LAYERS IN SILICON FORMED BY ION-IMPLANTATION

被引：0

作者：

FUNG, CD ^{[1
]}

LIAO, JL ^{[1
]}

ELSAYED, KR ^{[1
]}

KOPANSKI, JJ ^{[1
]}

机构：

[1] CASE WESTERN RESERVE UNIV,DEPT ELECT ENGN & APPL PHYS,CLEVELAND,OH 44106

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C80 / C80

页数：1

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