PHYSICAL AND ELECTRICAL-PROPERTIES OF PLASMA DEPOSITED SILICON-NITRIDE FILMS

被引：0

作者：

FUNG, CD

NAGY, TE

KO, WH

机构：

[1] CASE WESTERN RESERVE UNIV,DEPT ELECT ENGN & APPL PHYS,CLEVELAND,OH 44106

[2] CASE WESTERN RESERVE UNIV,CTR ELECT DESIGN,CLEVELAND,OH 44106

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C78 / C78

页数：1

共 50 条

[1] ELECTRICAL-PROPERTIES OF PLASMA-DEPOSITED FLUORINATED SILICON-NITRIDE
LIVENGOOD, RE
HESS, DW
[J]. THIN SOLID FILMS, 1988, 162 (1-2) : 59 - 65
[2] PHYSICOCHEMICAL PROPERTIES OF PLASMA DEPOSITED SILICON-NITRIDE FILMS
EFIMOV, VM
PANOVA, ZV
MALYGYN, AV
KOVCHAVTSEV, AP
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 129 (02): : 483 - 490
[3] PHYSICAL AND ELECTRICAL-PROPERTIES OF SILICON-NITRIDE AND SILICON NITRIDE-INDIUM PHOSPHIDE INTERFACE
FUJIWARA, I
YAJIMA, Y
FUKUZAWA, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (09) : 2629 - 2632
[4] PHYSICAL AND ELECTRICAL CHARACTERIZATION OF OXYNITRIDE FILMS PRODUCED BY PLASMA OXIDATION OF DEPOSITED SILICON-NITRIDE LAYERS
KENNEDY, GP
TAYLOR, S
ECCLESTON, W
ARNOLDBIK, WM
HABRAKEN, FHPM
[J]. MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) : 141 - 144
[5] EFFECT OF SI-H AND N-H BONDS ON ELECTRICAL-PROPERTIES OF PLASMA DEPOSITED SILICON-NITRIDE AND OXYNITRIDE FILMS
VANNGUYEN, S
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : 275 - 281
[6] STRUCTURAL AND ELECTRICAL-PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY MULTIPOLAR PLASMA-ENHANCED DEPOSITION
BOHER, P
RENAUD, M
VANLJZENDOORN, LJ
BARRIER, J
HILY, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1464 - 1472
[7] PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE
STEIN, HJ
WELLS, VA
HAMPY, RE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C143 - C143
[8] PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE
STEIN, HJ
WELLS, VA
HAMPY, RE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) : 1750 - 1754
[9] ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION
MAEDA, M
ARITA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6852 - 6856
[10] REGULARITIES OF GROWTH AND ELECTRICAL-PROPERTIES IN THE PLASMA-ENHANCED DEPOSITION OF SILICON-NITRIDE
ALEKSANDROV, LN
BELOUSOV, II
EFIMOV, VM
[J]. THIN SOLID FILMS, 1988, 157 (02) : 337 - 343

← 1 2 3 4 5 →