EFFECT OF SI-H AND N-H BONDS ON ELECTRICAL-PROPERTIES OF PLASMA DEPOSITED SILICON-NITRIDE AND OXYNITRIDE FILMS

被引：2

|

作者：

VANNGUYEN, S

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期

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D O I：

10.1007/BF02653366

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：275 / 281

页数：7

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