EFFECT OF SI-H AND N-H BONDS ON ELECTRICAL-PROPERTIES OF PLASMA DEPOSITED SILICON-NITRIDE AND OXYNITRIDE FILMS

被引：2
|
作者：
VANNGUYEN, S
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期
关键词：
D O I：
10.1007/BF02653366
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：275 / 281
页数：7
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