BURIED SILICON-NITRIDE FORMED BY NITROGEN IMPLANTATION

被引：0
|
作者：
ZIMMER, G
VOGT, H
BELZ, J
TEKAAT, E
机构：
[1] UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
[2] FRAUNHOFER INST,IMS,D-4100 DUISBURG,FED REP GER
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C95 / C95
页数：1
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