AN 18K BIPOLAR DYNAMIC RANDOM-ACCESS MEMORY

被引：1
|
作者：
PENOYER, RF
ELKAREH, B
HOUGHTON, RJ
LANE, PK
SELFRIDGE, TA
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1980年 / 15卷 / 05期
关键词：
D O I：
10.1109/JSSC.1980.1051483
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：861 / 865
页数：5
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