A NEW DYNAMIC RANDOM-ACCESS MEMORY CELL USING A BIPOLAR MOS COMPOSITE STRUCTURE

被引：0
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作者：
WU, CY
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 08期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：886 / 894
页数：9
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