A NEW DYNAMIC RANDOM-ACCESS MEMORY CELL USING A BIPOLAR MOS COMPOSITE STRUCTURE

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作者：

WU, CY

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IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 08期

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TM [电工技术]; TN [电子技术、通信技术];

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0808 ; 0809 ;

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页码：886 / 894

页数：9

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