64 KBIT MOS DYNAMIC RANDOM-ACCESS MEMORY

被引：6

作者：

NATORI, K ^{[1
]}

OGURA, M ^{[1
]}

IWAI, H ^{[1
]}

MAEGUCHI, K ^{[1
]}

TAGUCHI, S ^{[1
]}

机构：

[1] NTJS INC,KAWASAKI,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1979年 / 14卷 / 02期

关键词：

D O I：

10.1109/JSSC.1979.1051200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：482 / 485

页数：4

共 50 条

[1] 64 KBIT MOS DYNAMIC RANDOM-ACCESS MEMORY
NATORI, K
OGURA, M
IWAI, H
MAEGUCHI, K
TAGUCHI, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 560 - 563
[2] DESIGN-FEATURES AND PERFORMANCE OF A 64-KBIT MOS DYNAMIC RANDOM-ACCESS MEMORY
WEIDLICH, R
[J]. SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS, 1982, 11 (03): : 120 - 126
[3] 4K MOS DYNAMIC RANDOM-ACCESS MEMORY
ABBOTT, RA
REGITZ, WM
KARP, JA
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (05) : 292 - 298
[4] HIGH-SPEED 16-KBIT N-MOS RANDOM-ACCESS MEMORY
ITOH, K
SHIMOHIGASHI, K
CHIBA, K
TANIGUCHI, K
KAWAMOTO, H
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (05) : 585 - 590
[5] DYNAMIC REFRESH FOR RANDOM-ACCESS MEMORY
不详
[J]. ELECTRONIC ENGINEERING, 1976, 48 (583): : 19 - 19
[6] A 64 KBIT MOS DYNAMIC RAM WITH NOVEL MEMORY CAPACITOR
SMITH, FJ
YU, RT
LEE, I
WONG, SWS
EMBRATHIRY, MP
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (02) : 184 - 189
[7] FAULT-TOLERANT 64K DYNAMIC RANDOM-ACCESS MEMORY
CENKER, RP
CLEMONS, DG
HUBER, WR
PETRIZZI, JB
PROCYK, FJ
TROUT, GM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 853 - 860
[8] MOS SEMICONDUCTOR RANDOM-ACCESS MEMORY FAILURE RATE
ARSENAULT, JE
ROBERTS, DC
[J]. MICROELECTRONICS AND RELIABILITY, 1979, 19 (1-2): : 81 - 88
[9] Future of dynamic random-access memory as main memory
Kim, Seong Keun
Popovici, Mihaela
[J]. MRS BULLETIN, 2018, 43 (05) : 334 - 339
[10] Future of dynamic random-access memory as main memory
Seong Keun Kim
Mihaela Popovici
[J]. MRS Bulletin, 2018, 43 : 334 - 339

← 1 2 3 4 5 →