64 KBIT MOS DYNAMIC RANDOM-ACCESS MEMORY

被引：6

作者：

NATORI, K ^{[1
]}

OGURA, M ^{[1
]}

IWAI, H ^{[1
]}

MAEGUCHI, K ^{[1
]}

TAGUCHI, S ^{[1
]}

机构：

[1] NTJS INC,KAWASAKI,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1979年 / 14卷 / 02期

关键词：

D O I：

10.1109/JSSC.1979.1051200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：482 / 485

页数：4

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