FAULT TOLERANCE IN N-MOS RANDOM-ACCESS MEMORIES WITH DYNAMIC REDUNDANCY METHODS

被引：1
|
作者：
NAIDU, RV
MAHAPATRA, S
机构：
来源：
MICROELECTRONICS AND RELIABILITY | 1988年 / 28卷 / 02期
关键词：
D O I：
10.1016/0026-2714(88)90350-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：193 / 200
页数：8
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