AN 18K BIPOLAR DYNAMIC RANDOM-ACCESS MEMORY

被引：1
|
作者：
PENOYER, RF
ELKAREH, B
HOUGHTON, RJ
LANE, PK
SELFRIDGE, TA
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1980年 / 15卷 / 05期
关键词：
D O I：
10.1109/JSSC.1980.1051483
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
下载
收藏
页码：861 / 865
页数：5
相关论文
共 50 条
  • [41] LOCALIZATION OF FAULTS IN RANDOM-ACCESS MEMORY DEVICES
    GAVRILOV, AA
    AVTOMATIKA I VYCHISLITELNAYA TEKHNIKA, 1980, (02): : 61 - 65
  • [42] FABRICATION AND CHARACTERIZATION OF A CROSSTIE RANDOM-ACCESS MEMORY
    BAUGH, CW
    CULLOM, JH
    HUBBARD, EA
    MENTZER, MA
    FEDORAK, R
    IEEE TRANSACTIONS ON MAGNETICS, 1982, 18 (06) : 1782 - 1784
  • [43] TESTING METHOD FOR STATIC RANDOM-ACCESS MEMORY
    MADHAVEN, R
    ELECTRONIC ENGINEERING, 1977, 49 (596): : 22 - 22
  • [44] CRYOTRON-BASED RANDOM-ACCESS MEMORY
    SASS, AR
    STEWART, WC
    COSENTINO, LS
    IEEE TRANSACTIONS ON MAGNETICS, 1967, MAG3 (03) : 260 - +
  • [45] Molecular random-access memory cell demonstrated
    Muntele, C
    MRS BULLETIN, 2001, 26 (06) : 432 - 432
  • [46] Current Status of Ferroelectric Random-Access Memory
    Yoshihiro Arimoto
    Hiroshi Ishiwara
    MRS Bulletin, 2004, 29 : 823 - 828
  • [47] RANDOM-ACCESS ANALOG MEMORY FOR EARLY VISION
    FRANCHI, E
    TARTAGNI, M
    GUERRIERI, R
    BACCARANI, G
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (07) : 1105 - 1109
  • [48] A HIGH-SPEED GAAS 1K STATIC RANDOM-ACCESS MEMORY
    OCONNOR, P
    FLAHIVE, PG
    ROMAN, BJ
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (05) : 1080 - 1082
  • [49] RANDOM-ACCESS
    STEVENS, RI
    JOURNAL OF SYSTEMS MANAGEMENT, 1990, 41 (10): : 42 - 42
  • [50] RANDOM-ACCESS
    DEPARIS, JR
    DATA PROCESSING, 1965, 7 (02): : 30 - 31
12345