A 256K DYNAMIC RANDOM-ACCESS MEMORY

被引：16
|
作者：
BENEVIT, CA
CASSARD, JM
DIMMLER, KJ
DUMBRI, AC
MOUND, MG
PROCYK, FJ
ROSENZWEIG, W
YANOF, AW
机构：
[1] BELL TEL LABS INC,DEPT CMOS INTEGRATED CIRCUIT,DIGITAL LINEAR TECHNOL GRP,ALLENTOWN,PA 18103
[2] BELL TEL LABS INC,ADV MEMORY DESIGN & MODELING,ALLENTOWN,PA 18103
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1982年 / 17卷 / 05期
关键词：
D O I：
10.1109/JSSC.1982.1051831
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：857 / 862
页数：6
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