A 256K DYNAMIC RANDOM-ACCESS MEMORY

被引：16
|
作者：
BENEVIT, CA
CASSARD, JM
DIMMLER, KJ
DUMBRI, AC
MOUND, MG
PROCYK, FJ
ROSENZWEIG, W
YANOF, AW
机构：
[1] BELL TEL LABS INC,DEPT CMOS INTEGRATED CIRCUIT,DIGITAL LINEAR TECHNOL GRP,ALLENTOWN,PA 18103
[2] BELL TEL LABS INC,ADV MEMORY DESIGN & MODELING,ALLENTOWN,PA 18103
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1982年 / 17卷 / 05期
关键词：
D O I：
10.1109/JSSC.1982.1051831
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：857 / 862
页数：6
相关论文
共 50 条
  • [41] 256K 动态RAM
    [J]. 电子器件, 1980, (S1) : 282 - 283
  • [42] A practical 256K GMR NV memory for high shock applications
    Sinclair, RA
    Mundon, SA
    Aryal, SC
    Sinclair, CM
    [J]. SEVENTH BIENNIAL IEEE INTERNATIONAL NONVOLATILE MEMORY TECHNOLOGY CONFERENCE, PROCEEDINGS, 1998, : 38 - 42
  • [43] Coding for Resistive Random-Access Memory Channels
    Song, Guanghui
    Cai, Kui
    Zhong, Xingwei
    Yu, Jiang
    Cheng, Jun
    [J]. 2020 IEEE GLOBAL COMMUNICATIONS CONFERENCE (GLOBECOM), 2020,
  • [44] OPTICAL RANDOM-ACCESS MEMORY BASED ON BACTERIORHODOPSIN
    BIRGE, RR
    ZHANG, CF
    LAWRENCE, AF
    [J]. MOLECULAR ELECTRONICS : BIOSENSORS AND BIOCOMPUTERS, 1989, : 369 - 379
  • [45] 0.25 MU-M ELECTRON-BEAM DIRECT WRITING TECHNIQUES FOR 256 MBIT DYNAMIC RANDOM-ACCESS MEMORY FABRICATION
    NAKAJIMA, K
    KOJIMA, Y
    HIRASAWA, S
    MUKAI, H
    ISHIDA, S
    HIROTA, T
    KONDOH, K
    AIZAKI, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B): : 6023 - 6027
  • [46] CCD ARRAY FORMS RANDOM-ACCESS MEMORY
    BAKER, RT
    [J]. ELECTRONICS, 1975, 48 (23): : 138 - 139
  • [47] CMOS RANDOM-ACCESS MEMORY REPLACES ROM
    BANGEN, G
    [J]. ELECTRONIC ENGINEERING, 1976, 48 (584): : 29 - 29
  • [48] Process and device technologies for 1 Gbit dynamic random-access memory cells
    Kaga, T
    Ohkura, M
    Murai, F
    Yokoyama, N
    Takeda, E
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2329 - 2334
  • [49] Molecular Random-Access Memory Cell Demonstrated
    Claudiu Muntele
    [J]. MRS Bulletin, 2001, 26 : 432 - 432
  • [50] Transition metal dichalcogenide FET-based dynamic random-access memory
    Raoofi, Mahdiye
    Gholipour, Morteza
    [J]. INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2024,
12345