共 50 条
- [42] AVALANCHE BREAKDOWN OF PLASTICALLY DEFORMED SILICON P-N-JUNCTIONS [J]. SOVIET MICROELECTRONICS, 1988, 17 (06): : 295 - 300
- [44] BREAKDOWN LOCALIZATION IN P-N JUNCTIONS [J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 934 - +
- [46] LIGHT EMISSION ASSOCIATED WITH BREAKDOWN IN SILICON CARBIDE P-N JUNCTIONS [J]. SOVIET PHYSICS-SOLID STATE, 1962, 3 (11): : 2405 - 2407
- [47] GATE-CONTROLLED SURFACE BREAKDOWN IN SILICON P-N JUNCTIONS [J]. PHILIPS RESEARCH REPORTS, 1970, 25 (01): : 21 - +
- [48] INHOMOGENEITY OF SURFACE CHARGE AND SURFACE BREAKDOWN IN SILICON P-N JUNCTIONS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (04): : 462 - &