BREAKDOWN PHENOMENA IN SILICON P-N JUNCTIONS UNDER MAGNETIC FIELD

被引：4

|

作者：

MEHTA, SC

PARSHAD, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 02期

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D O I：

10.1063/1.1658744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：760 / &

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