EFFECT OF A MAGNETIC FIELD ON BREAKDOWN LOCALIZATION IN P-N JUNCTIONS

被引：0

作者：

ANUPYLD, AY

GORYUNOV, NN

GRIGORYA.VG

OVECHKIN, YA

TOLKACHE.YA

机构：

来源：

RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR | 1967年 / 12卷 / 04期

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D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：640 / &

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[1] BREAKDOWN LOCALIZATION IN P-N JUNCTIONS
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[J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 934 - +
[2] BREAKDOWN PHENOMENA IN SILICON P-N JUNCTIONS UNDER MAGNETIC FIELD
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[3] MAGNETIC FIELD EFFECT ON CURRENT DISTRIBUTION IN P-N JUNCTIONS
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[4] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS
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[5] BREAKDOWN EFFECT IN P-N ALLOY GERMANIUM JUNCTIONS
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[6] EFFECT OF A MAGNETIC FIELD UPON ILLUMINATED INAS P-N JUNCTIONS
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[J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1969, 17 (1-2): : 133 - &
[8] HIGH FIELD EFFECT IN P-N JUNCTIONS
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[J]. SOVIET PHYSICS-SOLID STATE, 1962, 4 (02): : 228 - 235
[9] A REVIEW OF EFFECT OF IMPERFECTIONS ON ELECTRICAL BREAKDOWN OF P-N JUNCTIONS
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[J]. RCA REVIEW, 1967, 28 (02): : 175 - +
[10] THERMAL BREAKDOWN IN SILICON P-N JUNCTIONS
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[J]. PHYSICAL REVIEW, 1957, 108 (04): : 936 - 937