A REVIEW OF EFFECT OF IMPERFECTIONS ON ELECTRICAL BREAKDOWN OF P-N JUNCTIONS

被引：0

作者：

KRESSEL, H

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来源：

RCA REVIEW | 1967年 / 28卷 / 02期

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中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：175 / +

页数：1

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[1] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS
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PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110
[2] BREAKDOWN EFFECT IN P-N ALLOY GERMANIUM JUNCTIONS
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COLSON, ID
YOUNG, MRP
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (03): : 182 - 185
[3] BREAKDOWN LOCALIZATION IN P-N JUNCTIONS
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[J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 934 - +
[4] AVALANCHE BREAKDOWN IN P-N JUNCTIONS
SUNOHARA, Y
[J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1969, 17 (1-2): : 133 - &
[5] EFFECT OF A MAGNETIC FIELD ON BREAKDOWN LOCALIZATION IN P-N JUNCTIONS
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GORYUNOV, NN
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OVECHKIN, YA
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[J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (04): : 640 - &
[6] CORRELATION OF PHYSICAL LOCATION OF CRYSTAL DEFECTS WITH ELECTRICAL IMPERFECTIONS IN GAAS P-N JUNCTIONS
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IRVIN, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 3563 - &
[7] THERMAL BREAKDOWN IN SILICON P-N JUNCTIONS
TAUC, J
ABRAHAM, A
[J]. PHYSICAL REVIEW, 1957, 108 (04): : 936 - 937
[8] FORMATION OF BREAKDOWN IN SILICON P-N JUNCTIONS
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[J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (10): : 2442 - &
[9] TUNNEL BREAKDOWN IN SIC P-N JUNCTIONS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (04): : 599 - +
[10] Electric breakdown in GaN p-n junctions
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[J]. APPLIED PHYSICS LETTERS, 1996, 68 (02) : 229 - 231

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