Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p-n Junctions

被引：5

作者：

Brylevskiy, V. I. ^{[1
]}

Smirnova, I. A. ^{[1
]}

Podolska, N. I. ^{[1
]}

Zharova, Yu. A. ^{[1
]}

Rodin, P. B. ^{[1
]}

Grekhov, I. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2018年 / 44卷 / 02期

基金：

俄罗斯科学基金会;

关键词：

SILICON DIODES;

D O I：

10.1134/S1063785018020177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have experimentally studied the dynamics of impact-ionization switching in semiconductor structures without p-n junctions when subnanosecond high-voltage pulses are applied. Silicon n (+)-n-n (+) type structures and volume ZnSe samples with planar ohmic contacts exhibit reversible avalanche switching to the conducting state within about 200 ps, which resembles the well-known phenomenon of delayed avalanche breakdown in reverse-biased p (+)-n-n (+) diode structures. Experimental data are compared to the results of numerical simulations.

引用

页码：160 / 163

页数：4

共 50 条

[1] Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions
V. I. Brylevskiy
I. A. Smirnova
N. I. Podolska
Yu. A. Zharova
P. B. Rodin
I. V. Grekhov
[J]. Technical Physics Letters, 2018, 44 : 160 - 163
[2] Subnanosecond Impact-Ionization Switching of Silicon Structures without p-n Junctions
Podolska, N. I.
Rodin, P. B.
[J]. TECHNICAL PHYSICS LETTERS, 2017, 43 (06) : 527 - 530
[3] Effect of deep level impact ionization on avalanche breakdown in semiconductor p-n junctions
Kang, SS
Myles, CW
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 181 (01): : 219 - 229
[4] Subnanosecond impact-ionization switching of silicon structures without p–n junctions
N. I. Podolska
P. B. Rodin
[J]. Technical Physics Letters, 2017, 43 : 527 - 530
[5] AVALANCHE BREAKDOWN IN P-N JUNCTIONS
SUNOHARA, Y
[J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1969, 17 (1-2): : 133 - &
[6] EXPERIMENTAL STUDY OF AVALANCHE BREAKDOWN IN SILICON PLANAR P-N JUNCTIONS
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1483 - &
[7] AVALANCHE BREAKDOWN OF DIFFUSED SILICON P-N JUNCTIONS
KOKOSA, RA
DAVIES, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) : 874 - +
[8] AVALANCHE-THERMAL BREAKDOWN OF P-N JUNCTIONS
MARTIROSOV, IM
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (07): : 899 - +
[9] AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS
HALL, R
LECK, JH
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) : 529 - &
[10] AVALANCHE BREAKDOWN IN EPITAXIAL SIC P-N JUNCTIONS
VANOPDORP, C
VRAKKING, J
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2320 - +

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