Subnanosecond Impact-Ionization Switching of Silicon Structures without p-n Junctions

被引：6
|
作者：
Podolska, N. I. [1 ,2 ]
Rodin, P. B. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, St Petersburg Branch, Joint Supercomp Ctr, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2017年 / 43卷 / 06期
关键词：
DIODES;
D O I：
10.1134/S1063785017060128
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that an application of a fast-rising high-voltage pulse to an n(+)-n-n(+) silicon structure leads to subnanosecond avalanche breakdown, generation of electron-hole plasma throughout the entire structure, and structure switching to the conducting state in a time of about 100 ps. The predicted effect is similar to the delayed avalanche breakdown of reverse-biased p(+)-n-n(+) diode structures; however, it is implemented in a structure without p-n junctions.
引用
收藏
页码：527 / 530
页数：4
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