AVALANCHE BREAKDOWN CHARACTERISTICS OF ALLOYED SILICON P-N-JUNCTIONS

被引：1

作者：

TYAGI, MS ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT ELECT ENGN,KANPUR 16,INDIA

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1973年 / 35卷 / 01期

关键词：

D O I：

10.1080/00207217308938513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：25 / 32

页数：8

共 50 条

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