Effect of radiation defects on avalanche breakdown volrage at silicon p-n-junctions

被引：0

作者：

Korshunov, FP ^{[1
]}

Lastovsky, SB ^{[1
]}

机构：

[1] Byelarussian Acad Sci, Inst Solid State & Semicond Phys, Minsk, BELARUS

来源：

DOKLADY AKADEMII NAUK BELARUSI | 1999年 / 43卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Irradiation of Silicon p-n-junctions by electrons with energy 4 MeV increases the avalanche breakdown voltage at room temperature which is caused by decrease of concentration gradient of minor impurities as the result of radiation defects containing basic doping agents.

引用

页码：44 / 47

页数：4

共 50 条

[1] THE EFFECT OF RADIATION DEFECTS ON THE DIFFERENTIAL RESISTANCE OF P-N-JUNCTIONS DURING AVALANCHE BREAKDOWN
MARCHENKO, IG
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 115 (01): : K39 - K41
[2] ANISOTROPY OF AVALANCHE BREAKDOWN IN SILICON P-N-JUNCTIONS
KYUREGYAN, AS
SOROKIN, YG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (11): : 1232 - 1234
[3] AVALANCHE BREAKDOWN CHARACTERISTICS OF ALLOYED SILICON P-N-JUNCTIONS
TYAGI, MS
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1973, 35 (01) : 25 - 32
[4] AVALANCHE BREAKDOWN OF PLASTICALLY DEFORMED SILICON P-N-JUNCTIONS
KYUREGYAN, AS
SOROKIN, YG
KOLTSOVA, TG
[J]. SOVIET MICROELECTRONICS, 1988, 17 (06): : 295 - 300
[5] AVALANCHE BREAKDOWN LUMINESCENCE OF DIFFUSED P-N-JUNCTIONS IN SILICON
VLADIMIROV, AA
KOMAROVSKIKH, KF
FURSIN, GI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1211 - 1212
[6] EFFECT OF DU/DT ON AVALANCHE BREAKDOWN OF P-N-JUNCTIONS
KYUREGYAN, AS
[J]. SOVIET MICROELECTRONICS, 1989, 18 (01): : 38 - 43
[7] AVALANCHE BREAKDOWN VOLTAGE OF HYPER-ABRUPT SILICON P-N-JUNCTIONS
GUPTA, AK
TYAGI, MS
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (04) : 342 - 344
[8] AVALANCHE BREAKDOWN IN HIGH-VOLTAGE LARGE AREA SILICON P-N-JUNCTIONS
AKIMOV, PV
GREKHOV, IV
SEREZHKIN, YN
[J]. RADIOTEKHNIKA I ELEKTRONIKA, 1975, 20 (02): : 373 - 380
[9] TEMPERATURE DEPENDENCE OF AVALANCHE BREAKDOWN VOLTAGE IN P-N-JUNCTIONS
MARS, P
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1972, 32 (01) : 23 - &
[10] RELATIONSHIP BETWEEN DEFECTS IN SILICON AND AVALANCHE BREAKDOWN OF P-N JUNCTIONS
EVSEEV, YA
MAGDEN, IN
RADECHKO, AE
CHELNOKO.VE
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (08): : 1266 - &

← 1 2 3 4 5 →