Effect of radiation defects on avalanche breakdown volrage at silicon p-n-junctions

被引：0

作者：

Korshunov, FP ^{[1
]}

Lastovsky, SB ^{[1
]}

机构：

[1] Byelarussian Acad Sci, Inst Solid State & Semicond Phys, Minsk, BELARUS

来源：

DOKLADY AKADEMII NAUK BELARUSI | 1999年 / 43卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Irradiation of Silicon p-n-junctions by electrons with energy 4 MeV increases the avalanche breakdown voltage at room temperature which is caused by decrease of concentration gradient of minor impurities as the result of radiation defects containing basic doping agents.

引用

页码：44 / 47

页数：4

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