ANISOTROPY OF AVALANCHE BREAKDOWN IN SILICON P-N-JUNCTIONS

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作者：

KYUREGYAN, AS

SOROKIN, YG

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 11期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：1232 / 1234

页数：3

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