GAAS SELECTIVE EPITAXIAL-GROWTH BY MOLECULAR-BEAM EPITAXY - GROWTH CONDITION DEPENDENCE AND ITS MECHANISM

被引：0

作者：

OKAMOTO, A ^{[1
]}

OHATA, K ^{[1
]}

机构：

[1] NEC CORP,MICROELECTR RES LAB,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：S13 / S13

页数：1

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