MOLECULAR-BEAM EPITAXIAL-GROWTH AND STRUCTURAL CHARACTERIZATION OF ZNS ON (001) GAAS

被引：15
|
作者：
BENZ, RG [1 ]
HUANG, PC [1 ]
STOCK, SR [1 ]
SUMMERS, CJ [1 ]
机构：
[1] GEORGIA INST TECHNOL,SCH MAT ENGN,ATLANTA,GA 30332
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期
关键词：
CRYSTALS - Epitaxial Growth - ELECTRONS - Diffraction - MOLECULAR BEAM EPITAXY;
D O I：
10.1016/0022-0248(90)90734-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.
引用
收藏
页码：303 / 310
页数：8
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