MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNSE ON GAAS

被引：23
|
作者：
REICHOW, J
GRIESCHE, J
HOFFMANN, N
MUGGELBERG, C
ROSSMANN, H
WILDE, L
HENNEBERGER, F
JACOBS, K
机构：
[1] HUMBOLDT UNIV BERLIN,FACHBEREICH PHYS,MBE LABOR,INVALIDENSTR 110,D-10115 BERLIN,GERMANY
[2] DCA INSTRUMENTS,TURKU,FINLAND
[3] GERMAN REPRESENTAT,D-13403 BERLIN,GERMANY
[4] HUMBOLDT UNIV BERLIN,FACHBEREICH PHYS,INST OPT & SPEKTROSKOPIE,D-10115 BERLIN,GERMANY
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 131卷 / 3-4期
关键词：
D O I：
10.1016/0022-0248(93)90177-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Systematic investigations have been performed concerning the effect of growth temperature and beam pressure ratio on the structural perfection and optical properties of molecular beam epitaxy (MBE) grown ZnSe on GaAs substrates. A surface phase diagram of ZnSe has been derived showing the different surface reconstructions as a function of these growth conditions. RHEED reflex profiling reveals more details about the surface morphology occurring in different stages of the growth process. The epitaxial layers are further characterized by means of X-ray diffraction and various optical techniques.
引用
收藏
页码：277 / 282
页数：6
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