LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNS/GAAS(001) BY USING ELEMENTAL SULFUR SOURCE

被引：34
|
作者：
YONETA, M
OHISHI, M
SAITO, H
HAMASAKI, T
机构：
[1] Department of Applied Physics, Okayama University of Science, Okayama, 700
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(93)90628-A
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report successful growth of ZnS on GaAs(001) using elemental sulfur and zinc sources. In order to use S, which has a very high vapor pressure for molecular beam epitaxy, a new type of effusion cell is developed. The cell is composed of the effuser and post-heating zones. Not only the control of vapor pressure, but also bakeout of the MBE chamber could be achieved. ZnS/GaAs could be grown at temperatures as low as 150-degrees-C using S beam post-heated at 210-degrees-C and conventional Zn beam. Low temperature photoluminescence shows that high quality ZnS films are grown.
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页码：314 / 317
页数：4
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