MOLECULAR-BEAM EPITAXIAL-GROWTH ON RADIATION-HEATED GAAS SUBSTRATES

被引：0
|
作者：
PALMATEER, SC [1 ]
LEE, BR [1 ]
HWANG, JCM [1 ]
机构：
[1] GE,ELECTR LAB,SYRACUSE,NY 13221
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C467 / C467
页数：1
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