MOLECULAR-BEAM EPITAXIAL-GROWTH AND INTERFACE CHARACTERISTICS OF GAASSB ON GAAS SUBSTRATES

被引：61

|

作者：

YANO, M

ASHIDA, M

KAWAGUCHI, A

IWAI, Y

INOUE, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584716

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：199 / 203

页数：5

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