MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON SI(211)

被引：103
|
作者：
UPPAL, PN
KROEMER, H
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 06期
关键词：
D O I：
10.1063/1.335987
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：2195 / 2203
页数：9
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