MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100)

被引：207

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作者：

WANG, WI

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 12期

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D O I：

10.1063/1.94673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1149 / 1151

页数：3

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